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Freescale Semiconductor Technical Data
Document Number: MRF9200L Rev. 3, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. * Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 26 Volts, IDQ = 2400 mA, Pout = 40 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 17.5 dB Drain Efficiency -- 25% ACPR @ 750 kHz Offset -- - 46.5 dBc in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9200LR3 MRF9200LSR3
880 MHz, 40 W AVG., 26 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465B - 03, STYLE 1 NI - 880 MRF9200LR3
CASE 465C - 02, STYLE 1 NI - 880S MRF9200LSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 625 3.6 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 60C, 200 W CW Case Temperature 80C, 40 W CW Symbol RJC Value (1,2) 0.28 0.34 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF9200LR3 MRF9200LSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) B (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 2400 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 6.0 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6.7 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2.5 -- pF VGS(th) VGS(Q) VDS(on) gfs 1.5 3 -- -- 2.7 3.7 0.25 8.8 3.5 4.5 0.4 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 2400 mA, Pout = 40 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. Gps D ACPR IRL 16 22 -- -- 17.5 25 - 46.5 - 13 -- -- - 45 -9 dB % dBc dB
MRF9200LR3 MRF9200LSR3 2 RF Device Data Freescale Semiconductor
R3 R2 VBIAS + C34 Z1 Z2 Z3 C2 R1 C1 L1 C3 C4 C5 C6 C8 + C33 Z4 + C32 Z5 C31 Z6 C30 Z7 C29 Z8 B2 B1 DRAIN RF INPUT Z9 Z10 C7 Z11 DUT
+ C19 L2 C15 Z12 DRAIN C10 C11 C12 C14 C16 C9 Z13 Z14 Z15 C13 Z16 Z17 C20 C21 C22 C23
+ C24
+ C25
+ C26
+ C27
+ C28
VSUPPLY
Z18
RF OUTPUT
C17
C18
Z1 Z2 Z3 Z4 Z5 Z6 Z7
0.015 x 0.083 Microstrip 0.048 x 0.083 Microstrip 0.352 x 0.083 Microstrip 0.086 x 0.050 Microstrip 0.367 x 0.050 Microstrip 0.417 x 0.115 Microstrip 0.068 x 0.397 Microstrip
Z8 Z9 Z10 Z11 Z12 Z13
0.335 x 0.397 Microstrip 0.134 x 0.825 x 0.090 Taper 0.209 x 0.825 Microstrip 0.148 x 0.825 Microstrip 0.148 x 0.750 Microstrip 0.435 x 0.750 Microstrip
Z14 Z15 Z16 Z17 Z18 PCB
0.197 x 0.750 x 0.111 Taper 0.331 x 0.115 Microstrip 0.557 x 0.830 Microstrip 0.078 x 0.830 Microstrip 0.414 x 0.750 Microstrip Arlon, 0.030, r = 2.56
Figure 1. MRF9200LR3(SR3) Test Circuit Schematic
MRF9200LR3 MRF9200LSR3 RF Device Data Freescale Semiconductor 3
C24 C26 C34 VGG C31 C30 C5 R1 C2 C3 C33 C32 R2 R3 B2 B1 C29 CUT OUT AREA C7 C9 C11 L2 C19 C10 C14 C16 C23
VDD
C22 C21 C25 C27 C20 C28 C17 C13 C15
C1
L1 C4 C6 C8
C18
C12
MRF9200 Drain Rev. 3A
MRF9200 Drain Rev. 3B
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF9200LR3(SR3) Test Circuit Component Layout Table 5. MRF9200LR3(SR3) Test Circuit Component Designations and Values
Part B1 B2 C1 C2, C19 C3 C4, C18 C5 C6, C12 C7, C8 C9, C10 C11 C13 C14, C17 C15, C16 C20 C21, C22, C31 C23 C24, C25, C26, C27 C28 C29 C30 C32, C33 C34 L1 L2 R1 R2, R3 Description RF Bead, Surface Mount (0603) RF Bead, Surface Mount (0805) 2.2 pF Chip Capacitor (0603) 47 pF Chip Capacitors (0805) 2.0 pF Chip Capacitor (0603) 0.4- 2.5 pF Variable Capacitors 8.2 pF Chip Capacitor (0603) 0.8- 8.0 pF Variable Capacitors 12 pF Chip Capacitors (0603) 10 pF Chip Capacitors (0805) 5.1 pF Chip Capacitor (0805) 3.3 pF Chip Capacitor (0805) 1.5 pF Chip Capacitors (0805) 22 pF Chip Capacitors (0805) 0.56 F Chip Capacitor (1825) 2.2 F Chip Capacitors (1825) 10 F, 50 V Tantalum Chip Capacitor 22 F, 35 V Tantalum Chip Capacitors 330 F, 63 V Electrolytic Capacitor 10 F Chip Capacitor (1206) 0.01 F Chip Capacitor (1825) 22 F, 25 V Tantalum Chip Capacitors 47 F, 16 V Tantalum Chip Capacitor 22 nH Chip Inductor (0805) 8 nH Inductor 510 W, 1/10 W Chip Resistor (0805) 11 W, 1/8 W Chip Resistors (1206) Part Number 2506033007Y0 2508051107Y0 GQM1885C2A2R2CB01B GQM2195C1H470JB01B GQM1885C2A2R0BB01B 27283PC GQM1885C1H8R2DB01B 27291SL GQM1885C1H120JB01B GQM2195C2A100JB01B GQM2195C2A5R1DB01B GQM2195C2A3R3CB01B GQM2195C2A1R5CB01B GQM2195C1H220JB01B C1825C564J5RAC C1825C225J5RAC 522Z- 050/100MTRE T491X226K035AS NACZF331M100V (18X22) GRM31MF51A106ZA01B C1825C103J1RAC ECS - T1ED226R T491D476K016AS L0805220JEW A03T- 5 Manufacturer Fair- Rite Fair- Rite Murata Murata Murata Gigatronics Murata Gigatronics Murata Murata Murata Murata Murata Murata Kemet Kemet Tecate Kemet Nippon Murata Kemet Panasonic TE series Kemet AVX CoilCraft Dale/Vishay Dale/Vishay
MRF9200LR3 MRF9200LSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) -8 ACPR (dBc), ALT1 (dBc) -10 -12 -14 -16 -18 D, DRAIN EFFICIENCY (%) -10 ACPR (dBc), ALT1 (dBc) -12 -14 -16 -18 -20 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 19 18.8 18.6 Gps, POWER GAIN (dB) 18.4 18.2 18 17.8 17.6 17.4 17.2 ALT1 850 860 870 880 890 900 910 IRL D VDD = 26 Vdc, Pout = 40 W (Avg.), IDQ = 1800 mA N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 Gps ACPR 26 24 22 20 18 -45 -50 -55 -60 -65 -70 920
17 840
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 40 Watts Avg.
18 17.8 17.6 Gps, POWER GAIN (dB) 17.4 17.2 17 16.8 16.6 16.4 16.2 16 840 ALT1 850 860 870 880 890 900 910 VDD = 26 Vdc, Pout = 85 W (Avg.), IDQ = 1800 mA N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 IRL D Gps ACPR
38 36 34 32 -35 -40 -45 -50 -55 -60 -65 920
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 85 Watts Avg.
19 18.5 Gps, POWER GAIN (dB) 18 17.5 17 16.5 16 1200 mA 15.5 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 1800 mA VDD = 26 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements 100 kHz Tone Spacing IDQ = 3000 mA 2400 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-25 -30 3000 mA -35 IDQ = 1200 mA -40 -45 -50 -55 -60 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 1800 mA VDD = 26 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements, 100 kHz Tone Spacing 2400 mA
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF9200LR3 MRF9200LSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
-20 -30 -40 -50 -60 5th Order -70 7th Order -80 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 3rd Order VDD = 26 Vdc, IDQ = 1800 mA f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements
-10 VDD = 26 Vdc, Pout = 200 W (PEP), IDQ = 1800 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz 3rd Order
-20
-30
-40
5th Order 7th Order
-50 -60 0.1
1 TWO-TONE SPACING (MHz)
10
Figure 7. Intermodulation Distortion Products versus Output Power
Figure 8. Intermodulation Distortion Products versus Tone Spacing
60 Ideal 58 Pout, OUTPUT POWER (dBm) 56 54 52 50 48 31 VDD = 26 Vdc, IDQ = 1800 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 880 MHz 33 35 37 39 41 P1dB = 53.1 dBm (204.1 W) Actual P3dB = 54.25 dBm (266 W)
Pin, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus Input Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
50 VDD = 26 Vdc, IDQ = 1800 mA, f = 880 MHz N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 40
0
-20
30 ACPR 20 ALT1 10 D 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. Gps
-40
-60
-80
-100 100
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF9200LR3 MRF9200LSR3 6 RF Device Data Freescale Semiconductor
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc)
TYPICAL CHARACTERISTICS
20 18 Gps, POWER GAIN (dB) 16 14 12 10 8 3 10 100 Pout, OUTPUT POWER (WATTS) CW D VDD = 26 Vdc IDQ = 1800 mA f = 880 MHz Gps
60 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 50 40 30 20 10
0 350
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
20 18 Gps, POWER GAIN (dB) 16 D 14 12 10 8 1 10 100 Pout, OUTPUT POWER (WATTS) PEP VDD = 26 Vdc, IDQ = 1800 mA f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements, 100 kHz Tone Spacing IMD 0 -20 -40 -60 400 Gps 60 40 20
Figure 12. Power Gain, Efficiency and IMD versus Output Power
19
18 Gps, POWER GAIN (dB) VDD = 28 V 17 20 V 16 V 16 12 V 15 IDQ = 1800 mA f = 880 MHz 14 0 50 100 150 200 250 Pout, OUTPUT POWER (WATTS) CW 24 V 26 V
Figure 13. Power Gain versus Output Power
MRF9200LR3 MRF9200LSR3 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
1011 MTTF FACTOR (HOURS X AMPS2)
1010
109
108 90
110
130
150
170
190
210
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 14. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB)
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100
1.2288 MHz Channel BW .. .. .. .................... ..... ... ............ ............. .. . .. . . . . . . . . . . . . . . . . . . . . . . -ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . . .............. ..... . .............. ..... ...... .. . ....... .. . ........ .. ......... .... . . .. . ........ .. .... ..... . ......... ...... .... .... . ..... . ... ...... . .. ..... ...... .... .. . .... . ...... ......... ..... . ... .. ..... ... ... ..... . .. .. ......... -ACPR in 30 kHz .... .. . +ACPR in 30 kHz ............. ... ......... . .... .. ............ .... ......... ... ............. Integrated BW Integrated BW .. ........ .. ............. .... .. .. .. .... ... ........ . .
Figure 15. Single - Carrier CCDF N - CDMA
-110 -3.6 -2.9 -2.2
-1.5 -0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 16. Single - Carrier N - CDMA Spectrum
MRF9200LR3 MRF9200LSR3 8 RF Device Data Freescale Semiconductor
Zo = 2
f = 895 MHz Zsource f = 865 MHz
f = 895 MHz Zload f = 865 MHz
VDD = 26 Vdc, IDQ = 2400 mA, Pout = 40 W Avg. f MHz 865 880 895 Zsource 0.98 - j1.41 0.96 - j1.23 0.94 - j1.06 Zload 1.30 - j1.66 1.36 - j1.58 1.40 - j1.50
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance
MRF9200LR3 MRF9200LSR3 RF Device Data Freescale Semiconductor 9
NOTES
MRF9200LR3 MRF9200LSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M
(FLANGE) 3
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M (INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA
M
B S
N
M M M
(LID)
aaa C
M
TA
M
B
DIM A B C D E F G H K M N Q R S aaa bbb ccc
F E A
(FLANGE)
T A
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465B - 03 ISSUE E NI - 880 MRF9200LR3
B
1
(FLANGE)
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M
(INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA TA
M
B S B
N
M M M
(LID)
aaa
M
M
DIM A B C D E F H K M N R S aaa bbb ccc
C F E A
(FLANGE)
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
T A
SEATING PLANE
CASE 465C - 02 ISSUE D NI - 880S MRF9200LSR3
MRF9200LR3 MRF9200LSR3 RF Device Data Freescale Semiconductor 11
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MRF9200LR3 MRF9200LSR3
Rev. 12 3, 5/2006 Document Number: MRF9200L
RF Device Data Freescale Semiconductor

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